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Journal Articles

Interfacial properties of a direct bonded Nd-doped YVO$$_{4}$$ and YVO$$_{4}$$ single crystal

Sugiyama, Akira; Nara, Yasunaga; Wada, Kengo*; Fukuyama, Hiroyasu

Journal of Materials Science; Materials in Electronics, 15(9), p.607 - 612, 2004/09

Laser crystal bonding of a neodymium-doped yttrium orthovanadate (Nd: YVO$$_{4}$$) and a non-doped yttrium orthovanadate (YVO$$_{4}$$) crystal as a cold finger has been demonstrated. Instead of a traditional chemical treatment, a newly developed dry etching process was applied to the preparation for contact of mechanically polished surfaces. In the subsequent heat treatment process, stable heating at 873 K was required to prevent precipitation at the bonded interface. The bonded interface of 3 mm $$times$$ 3 mm was investigated by optical scattering and wavefront distortion measurements. The scattering density around the bonded interface was less than 4.6$$times$$10$$^{6}$$ /cm$$^{3}$$ and the wavefront distortion caused by the bonded region was assumed to be around 0.04-wave at 633 nm. Additional magnified inspection showed that atoms in the bonded region were well arranged with the same regularity as the bulk crystal. The diffusion coefficient of Nd$$^{3+}$$ ions in the YVO$$_{4}$$ crystal was estimated at 2.3$$times$$10$$^{-23}$$ m$$^{2}$$/sec at 873 K.

Journal Articles

Nd:YVO$$_{4}$$ and YVO$$_{4}$$ laser crystal integration by a direct bonding technique

Sugiyama, Akira; Fukuyama, Hiroyasu; Katsumata, Masaki*; Okada, Yukikatsu*

Integrated Optical Devices: Fabrication and Testing (Proceedings of SPIE Vol.4944), p.361 - 368, 2003/00

We report recent progress in bonding of crystals used in microchip lasers, Nd:YVO$$_{4}$$ and non-doped YVO$$_{4}$$ crystal that functions as a cold finger. The bonding technique consists of a dry etching process for polished crystal surfaces to be bonded and a successive transformation from hydrogen bonding to oxygen-bridged bonding at temperature below half of the melting point of crystal. Roughness of the surfaces was less than 0.2-lambda at 633 nm. After the etching of around 30 nm by an argon ion beam, the surfaces were contacted in the clean ambient, then heat treatment was done for 50 hours in a vacuum furnace. To evaluate the bonded region, we made optical scattering measurements, and laser oscillation tests pumped by a laser diode with the output power of 20 W. From these experiments, it was clear that the number of defects on the bonded surface is much smaller than that of the intrinsic defects, and the integrated crystal, improving thermal conductivity, can produce twice of laser output power compared with a usual one.

Journal Articles

Feasibility study of a direct bonding technique for laser crystals

Sugiyama, Akira; Fukuyama, Hiroyasu*; Kataoka, Yohei*; Nishimura, Akihiko; Okada, Yukikatsu*

Advanced Optical Manufacturing and Testing Technology 2000 (Proceedings of SPIE Vol.4231), p.261 - 268, 2000/11

no abstracts in English

Journal Articles

Optics developments for CPA lasers in JAERI

Sugiyama, Akira; Fukuyama, Hiroyasu*; Katsurayama, Masamichi*; Anzai, Yutaka*

Denki Gakkai Hikari, Ryoshi Debaisu Kenkyukai OQD-00-50, p.23 - 28, 2000/10

no abstracts in English

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